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RMPA2458 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Preliminary
September 2005
RMPA2458
2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Features
31.5dB small signal gain 27dBm output power @ 1dB compression 103mA total current at 19dBm modulated power out 2.5% EVM at 19 dBm modulated power out 3.3V collector supply operation 2.9V mirror supply operation Power saving shutdown options (bias control) Integrated power detector with 20dB dynamic range Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package
General Description
The RMPA2458 power amplifier is designed for high performance WLAN applications in the 2.4-2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA's industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.
Internally matched to 50 Ohms and DC blocked RF input/ output Optimized for use in 802.11b/g applications
Device
Electrical Characteristics1 802.11g OFDM Modulation
(176 s burst time, 100 s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter
Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current @ 19dBm POUT EVM @ 19dBm POUT2 Detector Output @ 19dBm POUT Detector Threshold3
Notes: 1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9V, TA = 25C, PA is constantly biased, 50 system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. POUT measured at PIN corresponding to power detection threshold.
Min
2.4 3.0
Typ
3.3 2.9 3.3 31.5 103 2.5 340 5
Max
2.5 3.6
Units
GHz V V mA dB mA % mV dBm
(c)2005 Fairchild Semiconductor Corporation
1
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RMPA2458 Rev. E
RMPA2458 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Electrical Characteristics1 802.11b CCK Modulation
(RF not framed) 11 Mbps Data Rate 22.0 MHz Bandwidth Parameter
Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current @ 19dBm Pout First Side Lobe Power @ 19dBm Pout Second Side Lobe Power @ 19dBm Pout Max Pout Spectral Mask Compliance2 Detector Output @ 19dBm Pout Detector Pout Threshold3
Min
2.4 3.0
Typ
3.3 2.9 3.3 32 130 -36 -60 24 1.15 5
Max
2.5 3.6
Units
GHz V V mA dB mA dBm dBm dBm V dBm
Electrical Characteristics1 Single Tone
Parameter
Frequency Collector Supply Voltage Mirror Supply Voltage (VM123) Gain Total Quiescent Current Bias Current at pin VM1234 P1dB Compression Current @ P1dB Compression Shutdown Current (VM123 = 0V) Input Return Loss Output Return Loss Detector Output at P1dB Compression Detector Pout Threshold3 Turn-on Time5 Spurious (Stability)6
Notes: 1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9 Volts, Ta = 25C, PA is constantly biased, 50 system. 2. PIN is adjusted to point where performance approaches spectral mask requirements. 3. POUT measured at PIN corresponding to power detection threshold. 4. Mirror bias current is included in the total quiescent current. 5. Measured from Device On signal turn on to the point where RF POUT stabilizes to 0.5dB. 6. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB.
Min
2.4 3.0 2.6
Typ
3.3 2.9 31.5 49 3.2 27 600 <1.0 12 9 2.4 5 <1.0 -65
Max
2.5 3.6 3.1
Units
GHz V V dB mA mA dBm mA A dB dB V V S dBc
2 RMPA2458 Rev. E
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RMPA2458 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Absolute Ratings1
Symbol
VC1, VC2, VC3 IC1, IC2, IC3 Supply Current IC1 IC2 IC3 Positive Bias Voltage RF Input Power Case Operating Temperature Storage Temperature
Parameter
Positive Supply Voltage
Ratings
5 50 150 700 3.6 +5 -40 to +85 -55 to +150
Units
V mA mA mA V dBm C C
VM123 PIN TCASE TSTG
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Functional Block Diagram
VDET GND GND GND
Pin
16 15 14 13
Description
VM123 VC2 GND RF IN GND VC1 GND GND RF OUT GND N/C VC3 GND VDET GND GND
1 2 3
VM123
1
VOLTAGE DETECTOR
12
VC3
4 5 6
VC2
2
11
N/C
7 8
GND
3
10
GND
9 10
RF IN
4
INPUT MATCH
OUTPUT MATCH
11
9
RF OUT
12 13 14
5
6
7
8
15 16
GND
VC1
GND
GND
3
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RMPA2458 Rev. E
RMPA2458 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Performance Data 802.11g OFDM Modulation
(176 s burst time, 100 s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Total Measured EVM Vs. Modulated Power Out VC=3.3V VM=2.9V T=25C
8
34
Gain Vs. Modulated Power Out VC=3.3V VM=2.9V T=25C
Note: Uncorrected EVM. Source EVM is approximately 0.8%.
7
33
Total Measured MVE (%)
6
32
5
Gain (dB)
2.40 GHz 2.45 GHz 2.50 GHz
4
31
3
30
2.40 GHz 2.45 GHz 2.50 GHz
2
29
1
0 5 7 9 11 13 15 17 19 21 23
28 5 7 9 11 13 15 17 19 21 23 25
Modulated Power Out (dBm)
Modulated Power Out (dBm)
Total Current Vs. Modulated Power Out VC=3.3V VM=2.9V T=25C
260 240 220 200
Detector Voltage Vs. Modulated Power Out VC=3.3V VM=2.9V T=25C
1400
1200
Detector Voltage (mV)
Total Current (mA)
1000
180 160 140 120 100 80 60 40 5 7 9 11 13 15 17 19 21 23 25
2.40 GHz 2.45 GHz 2.50 GHz
800
2.40 GHz 2.45 GHz 2.50 GHz
600
400
200 5 7 9 11 13 15 17 19 21 23 25
Modulated Power Out (dBm)
Modulated Power Out (dBm)
Single Tone
Gain Vs. Single Tone Power Out VC=3.3V VM=2.9V T=25C
33
S-Parameters Vs. Frequency VC=3.3V VM=2.9V T=25C
35 0
32
S21 (dB)
30
31
-5
Gain (dB)
2.40 GHz 2.45 GHz 2.50 GHz
S21 (dB)
30
25
-10
29
28
20
27
S11 (dB) S22 (dB)
-15
26 5 7 9 11 13 15 17 19 21 23 25 27
15 2.35 2.4 2.45 Frequency (GHz) 2.5
-20 2.55
Single Tone Power Out (dBm)
4 RMPA2458 Rev. E
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S11, S22 (dB)
RMPA2458 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Evaluation Board Schematic
16
15
14
13
1 2 3 4
12 11 10 9
5
6
7
8
Backside Ground
Package Outline
Dimensions in mm
Note: Dimensions do not include protrusions or mold flash. These are not to exceed 0.006" (.155mm) on any side.
5 RMPA2458 Rev. E
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RMPA2458 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Evaluation Board Bill of Materials
Qty
1 2 7 Ref 1 2 3 2 1 A/R A/R
Item No.
1 2 3 4 5 (C3) 6 (C1, C2) 7 (C4, C5, C6) 8 (L2, L3) 9 (L1) 10 11
Part Number
F100039 #142-0701-841 #S1322-XX-ND F1XXXXX 06035A150J GRM39C0G330J50D500 CC1206JX5R106M LLV1005FB5N6S LLV1005FH15NK SN63 SN96 PC Board
Description
SMA Connector RT Angle Sgl M Header Assembly, RMPA2458 15pF Capacitor 33pF Capacitor 10F Capacitor 5.6nH Inductor 15nH Inductor Solder Paste Solder Paste
Vendor
Fairchild Johnson Digikey Fairchild AVX Murata TDK Toko Toko Indium Corp. Indium Corp.
Evaluation Board Layout
C5 L3 C3
2458
C6
C2 L2 C1
L1
C4
Actual Board Size = 2.0" X 1.5"
6 RMPA2458 Rev. E
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RMPA2458 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Evaluation Board Turn-On Sequence1
Recommended turn-on sequence:
1) Connect common ground terminal to the Ground (GND) pin on the board. 2) Connect voltmeter to pin DT1 (VDET, voltage detector). 3) Apply positive supply voltage VC1 (=3.3 V) to pin VC1 (first stage collector). 4) Apply positive supply voltage VC2 (=3.3 V) to pin VC2 (second stage collector). 5) Apply positive supply voltage VC3 (=3.3 V) to pin VC3 (third stage collector). 6) Apply positive bias voltage VM123 (=2.9 V) to pin VM123 (bias networks). 7) At this point, you should expect to observe the following positive currents flowing into the pins: 8) Apply input RF power to SMA connector pin RFIN. Currents in pins VC1, VC2 and VC3 will vary depending on the input drive level. 9) Vary positive voltage on pin VM123 from +2.9 V to +0 V to shut down the amplifier or alter the power level. Shut down current flow into the pins:
Pin
VC1 VC2 VC3
Current
<1 nA <1 nA <1 nA
Recommended turn-off sequence:
Use reverse order described in the turn-on sequence above.
Note: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design
Pin
VM123 VC1 VC2 VC3
Current
1.0 - 5.0 mA 1.0 - 9.0 mA 5.0 - 25.0 mA 22.0 - 42.0 mA
7 RMPA2458 Rev. E
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RMPA2458 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Assemble the devices within one year of removal from the dry pack. * During the one year period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the one year period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125C for 24 hours minimum, must be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile * Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3C/sec. * Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200C. * Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255-260C, with a maximum limit of 260C. * Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed.
Recommended Solder Reflow Profile
260
Ramp-Up R ate 3 C/sec max
Peak tem p 260 +0/-5 C 10 - 20 sec
Temperature (C)
217 200
Time above li quidus temp 60 - 150 sec
150
Preheat, 150 to 200 C 60 - 180 sec
100
Ramp-Up R ate 3 C/sec max
50 25
Time 25 C/sec t o peak tem p 6 mi nutes max
Ramp-Do wn Rate 6 C/sec max
Time (Sec)
8 RMPA2458 Rev. E
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RMPA2458 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
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SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
9 RMPA2458 Rev. E
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